JPH0442827B2 - - Google Patents

Info

Publication number
JPH0442827B2
JPH0442827B2 JP60153517A JP15351785A JPH0442827B2 JP H0442827 B2 JPH0442827 B2 JP H0442827B2 JP 60153517 A JP60153517 A JP 60153517A JP 15351785 A JP15351785 A JP 15351785A JP H0442827 B2 JPH0442827 B2 JP H0442827B2
Authority
JP
Japan
Prior art keywords
transistor
base
region
current mirror
series resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60153517A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6214456A (ja
Inventor
Haruji Futami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60153517A priority Critical patent/JPS6214456A/ja
Publication of JPS6214456A publication Critical patent/JPS6214456A/ja
Publication of JPH0442827B2 publication Critical patent/JPH0442827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP60153517A 1985-07-11 1985-07-11 半導体集積回路装置 Granted JPS6214456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60153517A JPS6214456A (ja) 1985-07-11 1985-07-11 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60153517A JPS6214456A (ja) 1985-07-11 1985-07-11 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6214456A JPS6214456A (ja) 1987-01-23
JPH0442827B2 true JPH0442827B2 (en]) 1992-07-14

Family

ID=15564265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60153517A Granted JPS6214456A (ja) 1985-07-11 1985-07-11 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6214456A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289341A (ja) * 1988-09-27 1990-03-29 Matsushita Electron Corp 半導体集積回路
JPH08162472A (ja) * 1994-12-02 1996-06-21 Mitsubishi Electric Corp バイポーラトランジスタ,バイポーラトランジスタを有する半導体装置およびその製造方法
JP2003045882A (ja) 2001-07-27 2003-02-14 Nec Corp 半導体装置及びその設計方法

Also Published As

Publication number Publication date
JPS6214456A (ja) 1987-01-23

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